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安世氮化鎵場效應(yīng)晶體管(GaN FET)應(yīng)用參數(shù)
Type number | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | RDSon [typ] @ VGS = 10 V (mΩ) | Tj [max] (°C) | ID [max] (A) | ID [max] @ T = 100 °C (A) | IDM [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Rth(j-mb) [max] (K/W) |
CCPAK | Development | N | 1 | 650 | 39 | 33 | 175 | 59 | 42 | 237 | 5 | 26 | 300 | 167 | 4 | N | 1500 | 147 | 0.5 | ||
CCPAK | Development | N | 1 | 650 | 39 | 33 | 175 | 60 | 42 | 240 | 5 | 30 | 300 | 112 | 4 | Y | 1500 | 147 | 0.5 | ||
CCPAK | Development | N | 1 | 650 | 39 | 33 | 175 | 60 | 42 | 240 | 15 | 30 | 300 | 150 | 4 | N | 1500 | 147 | 0.5 | ||
CCPAK | Development | N | 1 | 650 | 39 | 33 | 175 | 60 | 42 | 240 | 15 | 30 | 300 | 150 | 4 | Y | 1500 | 147 | 0.5 | ||
TO-247 | Production | N | 1 | 650 | 41 | 35 | 175 | 47.2 | 33.4 | 240 | 5 | 22 | 187 | 150 | 3.9 | N | 1500 | 147 | 0.8 | ||
TO-247 | Production | N | 1 | 650 | 60 | 50 | 175 | 34.5 | 24.4 | 150 | 4 | 15 | 143 | 125 | 3.9 | N | 1000 | 130 | 1.05 |
安世氮化鎵場效應(yīng)晶體管(GaN FET)封裝
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